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| RF5111 0 RoHS Compliant & Pb-Free Product Typical Applications * 3V DCS1800 (PCN) Cellular Handsets * 3V DCS1900 (PCS) Cellular Handsets * 3V Dual-Band/Triple-Band Handsets Product Description -A3.00 SQ. 3V DCS POWER AMPLIFIER * Commercial and Consumer Systems * Portable Battery-Powered Equipment * GPRS Compatible 0.15 C A 2 PLCS The RF5111 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in DCS1800/1900 handheld digital cellular equipment and other applications in the 1700MHz to 2000MHz band. On-board power control provides over 65dB of control range with an analog voltage input, and provides power down with a logic "low" for standby operation. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF5111 can be used together with the RF5110 for dual-band operation. The device is packaged in an ultra-small plastic package, minimizing the required board space. Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS 1.00 0.85 0.80 0.65 0.05 C 1.50 TYP 2 PLCS 0.15 C B 0.05 0.01 12 MAX 2 PLCS 0.15 C B -B1.37 TYP 2 PLCS 0.15 C A -CDimensions in mm. 0.10 M C A B SEATING PLANE 2.75 SQ. 0.60 0.24 TYP 0.45 0.00 4 PLCS Shaded lead is pin 1. 0.30 0.18 1.65 SQ. 1.35 0.23 0.13 4 PLCS 0.50 0.55 0.30 Package Style: QFN, 16-Pin, 3x3 Features * Single 2.7V to 4.8V Supply Voltage * +33dBm Output Power at 3.5V * 27dB Gain with Analog Gain Control VCC2 VCC2 VCC2 2f0 16 VAT EN 1 RF IN 2 GND1 3 VCC1 4 5 APC1 15 14 13 12 RF OUT 11 RF OUT 10 RF OUT 9 NC * 50% Efficiency * 1700MHz to 1950MHz Operation * Supports DCS1800 and PCS1900 Ordering Information RF5111 3V DCS Power Amplifier RF5111PCBA-41X Fully Assembled Evaluation Board 6 APC2 7 VCC 8 NC Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A1 060921 2-1 RF5111 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VAPC) Enable Voltage (VAT_EN) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 -0.5 to +3.0 1500 +13 50 10:1 -40 to +85 -55 to +150 Unit VDC V V mA dBm % C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Specification Min. Typ. Max. Unit Condition Temp=25 C, VCC =3.6V, VAPC1,2 =2.8V, VAT_EN =0V, PIN =+5.5dBm, Freq=1710MHz to 1910MHz, 37.5% Duty Cycle, pulse width=1731s See application schematic for tuning details. A different tuning is required. Temp=+25C, VCC =3.6V, VAPC1,2 =2.8V Temp=+25C, VCC =3.3V, VAPC1,2 =2.8V Temp=+60C, VCC =3.3V, VAPC1,2 =2.8V At POUT,MAX, VCC =3.6V POUT =+20dBm POUT =+10dBm Overall Operating Frequency Range Usable Frequency Range Maximum Output Power 1710 to 1785 1850 to 1910 1700 to 2000 +33 +32.8 +32.5 49 15 10 +8.0 MHz MHz MHz dBm dBm dBm % % % dBm dBm Total Efficiency +32.3 +32 +30.4 43 Recommended Input Power Range Output Noise Power +5.5 +10.0 -79 Forward Isolation Second Harmonic Third Harmonic All Other Non-Harmonic Spurious Input Impedance Input VSWR Output Load VSWR Stability Ruggedness Output Load Impedance 8:1 10:1 -37 -20 -20 -25 -7 -7 -36 dBm dBm dBm dBm RBW=100kHz, 1805MHz to 1880MHz and 1930MHz to 1990MHz, POUT,MIN POUT,MAX-5dB 2-2 Rev A1 060921 RF5111 Parameter Power Control Power Control "ON" Power Control "OFF" Power Control Range Gain Control Slope APC Input Capacitance APC Input Current Turn On/Off Time 0.3 62 0.5 68 100 4.5 10 5 10 100 3.0 V V dB dB/V pF mA A ns V V V A mA A A Maximum POUT, Voltage supplied to the input Minimum POUT, Voltage supplied to the input VAPC1,2 =0.3V to 2.8V, VAT_EN =2.7V, PIN =+8dBm POUT =-10dBm to +33dBm DC to 2MHz VAPC1,2 =2.8V VAPC1,2 =0V Specification Min. Typ. Max. Unit Condition Power Supply Power Supply Voltage 2.7 3.5 4.8 5.5 1.3 5 1 1 295 10 10 Specifications Nominal operating limits, POUT <+33dBm With maximum output load VSWR 6:1, POUT <+33dBm DC Current at POUT,MAX Idle Current, PIN <-30dBm, VAPC =2.6V PIN <-30dBm, VAPC1,2 =0.2V PIN <-30dBm, VAPC1,2 =0.2V, Temp=+85C Power Supply Current Rev A1 060921 2-3 RF5111 Pin 1 Function VAT EN Description Control pin for the pin diode. The purpose of the pin diode is to attenuate RF drive level when VAPC is low. This serves to reduce RF leakage through the device caused by self-biasing under high RF drive levels. A good input match is maintained when the input stage bias is turned off by the same mechanism. When this pin is set high, pin diode attenuation control is turned on. (See Theory of Operation for details.) RF Input. This is a 50 input, but the actual impedance depends on the interstage matching network connected to pin 5. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. Interface Schematic 2 RF IN VCC1 RF IN PIN From Attn control circuit GND 1 From Bias Stages 3 GND1 4 VCC1 5 APC1 Ground connection for the preamplifier stage. For best performance, See pin 2. keep traces physically short and connect immediately to the ground plane. It is important for stability that this pin has it's own vias to the groundplane, to minimize any common inductance. Power supply for the preamplifier stage and interstage matching. This See pin 2. pin forms the shunt inductance needed for proper tuning of the interstage match. Refer to the application schematic for proper configuration, and note that position and value of the components are important. Power Control for the driver stage and preamplifier. When this pin is APC "low", all circuits are shut off. A "low" is typically 0.5V or less at room temperature. A shunt bypass capacitor is required. During normal operation this pin is the power control. Control range varies from approximately 1.0V for -10dBm to 2.6V for +33dBm RF output power. The maximum power achievable depends on the actual output matching; see the application information for more details. The maximum current into this pin is 5mA when VAPC1 =2.6V, and 0mA when VAPC =0V. GND VCC To RF Stages GND 6 7 8 9 10 APC2 VCC NC NC RF OUT Power control for the output stage. See pin 6 for more details. Power supply for the bias circuits. Not connected. Not connected. RF output and power supply for the output stage. Bias voltage for the final stage is provided through this wide output pin. An external matching network is required to provide the optimum load impedance. See pin 6. See pin 6. RF OUT From Bias GND Stages PCKG BASE 11 12 13 RF OUT RF OUT 2F0 Same as pin 10. Same as pin 10. Connection for the second harmonic trap. This pin is internally connected to the RF OUT pins. The bonding wire together with an external capacitor form a series resonator that should be tuned to the second harmonic frequency in order to increase efficiency and reduce spurious outputs. Same as pin 10. Same as pin 10. Same as pin 10. 2-4 Rev A1 060921 RF5111 Pin 14 Function VCC2 Description Power supply for the driver stage. This pin forms the shunt inductance needed for proper tuning of the second interstage match. Interface Schematic VCC2 From Bias GND2 Stages 15 16 Pkg Base VCC2 VCC2 GND Same as pin 14. Same as pin 14. Ground connection for the output stage. This pad should be connected to the groundplane by vias directly under the device. A short path is required to obtain optimum performance, as well as to provide a good thermal path to the PCB for maximum heat dissipation. Same as pin 14. Same as pin 14. Rev A1 060921 2-5 RF5111 Theory of Operation and Application Information The RF5111 is a three-stage device with 28 dB gain at full power. Therefore, the drive required to fully saturate the output is +5dBm. Based upon HBT (Heterojunction Bipolar Transistor) technology, the part requires only a single positive 3V supply to operate to full specification. Power control is provided through a single pin interface, with a separate Power Down control pin. The final stage ground is achieved through the large pad in the middle of the backside of the package. First and second stage grounds are brought out through separate ground pins for isolation from the output. These grounds should be connected directly with vias to the PCB ground plane, and not connected with the output ground to form a so called "local ground plane" on the top layer of the PCB. The output is brought out through the wide output pad, and forms the RF output signal path. The amplifier operates in near Class C bias mode. The final stage is "deep AB", meaning the quiescent current is very low. As the RF drive is increased, the final stage self-biases, causing the bias point to shift up and, at full power, draws about 1500mA. The optimum load for the output stage is approximately 4.5. This is the load at the output collector, and is created by the series inductance formed by the output bond wires, vias, and microstrip, and 2 shunt capacitors external to the part. The optimum load impedance at the RF Output pad is 4.5-j3.9. With this match, a 50 terminal impedance is achieved. The input is internally matched to 50 with just a blocking capacitor needed. This data sheet defines the configuration for GSM operation. The input is DC coupled; thus, a blocking cap must be inserted in series. Also, the first stage bias may be adjusted by a resistive divider with high value resistors on this pin to VPC and ground. For nominal operation, however, no external adjustment is necessary as internal resistors set the bias point optimally. When the device is driven at maximum input power self biasing would occur. This results in less isolation than one would expect, and the maximum output power would be about -15dBm. If the drive power to the PA is turned on before the GSM ramp-up, higher isolation is required. In order to meet the GSM system specs under those conditions, a PIN diode attenuator connected to the input can be turned on. The figure below shows how the attenuator and its controls are connected. VCC RF IN 750 5k APC 2k AT_EN 500 PIN From Bias Stages The current through the PIN diode is controlled by two signals: AT_EN and APC. The AT_EN signal allows current through the PIN diode and is an on/off function. The APC signal controls the amount of current through the PIN diode. Normally, the AT_EN signal will be derived from the VCO ENABLE signal available in most GSM handset designs. If maximum isolation is needed before the ramp-up, the AT_EN signal needs to be turned on before the RF power is applied to the device input. The current into this pin is not critical, and can be reduced to a few hundred micro amps with an external series resistor. Without the resistor, the pin will draw about 700A. 2-6 Rev A1 060921 RF5111 Because of the inverting stage at the APC input, the current through the PIN diode is inverted from the APC voltage. Thus, when VAPC is high for maximum output power, the attenuator is turned off to obtain maximum drive level for the first RF stage. When VAPC is low for maximum isolation, the attenuator is be turned on to reduce the drive level and to avoid self-biasing. The PIN diode is dimensioned such that a low VAPC the impedance of the diode is about 50 Ohm. Since the input impedance of the first RF stage become very high when the bias is turned off, this topology will maintain a good input impedance over the entire VAPC control range. VCC1 and VCC2 provide supply voltage to the first and second stage, as well as provides some frequency selectivity to tune to the operating band. Essentially, the bias is fed to this pin through a short microstrip. A bypass capacitor sets the inductance seen by the part, so placement of the bypass cap can affect the frequency of the gain peak. This supply should be bypassed individually with 100pF capacitors before being combined with VCC for the output stage to prevent feedback and oscillations. The RF OUT pin provides the output power. Bias for the final stage is fed to this output line, and the feed must be capable of supporting the approximately 1.5A of current required. Care should be taken to keep the losses low in the bias feed and output components. A narrow microstrip line is recommended because DC losses in a bias choke will degrade efficiency and power. While the part is safe under CW operation, maximum power and reliability will be achieved under pulsed conditions. The data shown in this data sheet is based on a 12.5% duty cycle and a 600s pulse, unless specified otherwise. The part will operate over a 3.0V to 5.0V range. Under nominal conditions, the power at 3.5V will be greater than +32dBm at +85C. As the voltage is increased, however, the output power will increase. Thus, in a system design, the ALC (Automatic Level Control) Loop will back down the power to the desired level. This must occur during operation, or the device may be damaged from too much power dissipation. At 5.0V, over +36dBm may be produced; however, this level of power is not recommended, and can cause damage to the device. The HBT breakdown voltage is >20V, so there is no issue with overvoltage. However, under worst-case conditions, with the RF drive at full power during transmit, and the output VSWR extremely high, a low load impedance at the collector of the output transistors can cause currents much higher than normal. Due to the bipolar nature of the devices, there is no limitation on the amount of current the device will sink, and the safe current densities could be exceeded. High current conditions are potentially dangerous to any RF device. High currents lead to high channel temperatures and may force early failures. The RF5111 includes temperature compensation circuits in the bias network to stabilize the RF transistors, thus limiting the current through the amplifier and protecting the devices from damage. The same mechanism works to compensate the currents due to ambient temperature variations. To avoid excessively high currents it is important to control the VAPC when operating at supply voltages higher than 4.0V, such that the maximum output power is not exceeded. Rev A1 060921 2-7 RF5111 Application Schematic Instead of a stripline, an inductor of ~6 nH can be used VCC 12 pF 1 nF Very close to pin 15/16 VCC 15 pF 1.0 pF 16 1 33 pF RF IN 2 3 4 15 pF Distance between edge of device and capacitor is 0.240" to improve the "off" isolation Instead of a stripline, an inductor of 2.2 nH can be used 15 14 13 12 11 Quarter wave length 50 strip 5.1 pF 33 pF RF OUT 1.0 pF Note 1 Note 1 VCC 10 9 5 6 7 8 VCC Distance between edge of device and capacitor is 0.080" Distance center to center of capacitors 0.220" 15 pF 15 pF 15 pF APC Notes: 1. Using a hi-Q capacitor will increase efficiency slightly. 2. All capacitors are standard 0402 multi layer chip. 2-8 Rev A1 060921 RF5111 Internal Schematic VCC1 VCC2 RF OUT APC1 RF IN VCC APC2 VCC 750 VCC 500 320 500 200 5k APC1 AT_EN 3k 2.5k 2.5k 1.5k 1.5k GND1 PKG BASE PKG BASE Rev A1 060921 2-9 RF5111 Evaluation Board Schematic Dual-Band DCS/PCS Lumped Element VCC P1 C22 1 nF C23 33 pF C20 1 nF VAT EN C25 1 nF C24 1 nF C19 12 pF 16 1 J1 RF IN 50 strip 2 C1 47 pF L2 1.2 nH VCC C3 1 nF C3A 10 nF 100 mils C21 3.3 uF + 3 4 + P1-1 P1-2 C16 3.3 uF C15 1 nF C18 1 pF P1-3 L5 10 Ferrite 15 14 13 12 11 10 9 5 6 7 8 C9 10 nF C6 1 nF C7 1 nF 50 strip C8 33 pF C10 5.1 pF C11 2.2 pF C12 2.4 pF L3 8.8 nH C17 33 pF L4 1.2 nH C14 33 pF 1 2 3 4 5 CON5 VAT EN VCC VCC GND GND 50 strip J2 RF OUT C2 1 nF C4 27 pF J3 APC VCC 2-10 Rev A1 060921 RF5111 Evaluation Board Layout Board Size 2.0" x 2.0" Board Thickness 0.032", Board Material FR-4, Multi-Layer Rev A1 060921 2-11 RF5111 Typical Test Setup Power Supply V- S- S+ V+ RF Generator Spectrum Analyzer 3dB 10dB/5W Buffer x1 OpAmp Pulse Generator A buffer amplifier is recommended because the current into the VAPC changes with voltage. As an alternative, the voltage may be monitored with an oscilloscope. Notes about testing the RF5111 The test setup shown above includes two attenuators. The 3dB pad at the input is to minimize the effects that the switching of the input impedance of the PA has on the signal generator. When VAPC is switched quickly, the resulting input impedance change can cause the signal generator to vary its output signal, either in output level or in frequency. Instead of an attenuator an isolator may also be used. The attenuator at the output is to prevent damage to the spectrum analyzer, and should be able to handle the power. It is important not to exceed the rated supply current and output power. When testing the device at higher than nominal supply voltage, the VAPC should be adjusted to avoid the output power exceeding +36dBm. During load-pull testing at the output it is important to monitor the forward power through a directional coupler. The forward power should not exceed +36dBm, and VAPC needs to be adjusted accordingly. This simulates the behavior for the power control loop in this respect. To avoid damage, it is recommended to set the power supply to limiting the current during the burst, not to exceed the maximum current rating. 2-12 Rev A1 060921 RF5111 PCB Design Requirements PCB Surface Finish The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3inch to 8inch gold over 180inch nickel. PCB Land Pattern Recommendation PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and tested for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances. PCB Metal Land Pattern A = 0.64 x 0.28 (mm) Typ. B = 0.28 x 0.64 (mm) Typ. C = 1.50 (mm) Sq. Dimensions in mm. 1.50 Typ. 0.50 Typ. Pin 16 B Pin 1 B B B Pin 12 A 0.50 Typ. A C A A 0.55 Typ. B B B B A A A A 0.75 Typ. 1.50 Typ. Pin 8 0.55 Typ. 0.75 Typ. Figure 1. PCB Metal Land Pattern (Top View) Rev A1 060921 2-13 RF5111 PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier. A = 0.74 x 0.38 (mm) Typ. B = 0.38 x 0.74 (mm) Typ. C = 1.60 (mm) Sq. Dimensions in mm. 1.50 Typ. 0.50 Typ. Pin 16 B Pin 1 B B B Pin 12 A 0.50 Typ. A C A A 0.55 Typ. B 0.55 Typ. 0.75 Typ. B B B A A A A 0.75 Typ. 1.50 Typ. Pin 8 Figure 2. PCB Solder Mask Pattern (Top View) Thermal Pad and Via Design The PCB land pattern has been designed with a thermal pad that matches the die paddle size on the bottom of the device. Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. 2-14 Rev A1 060921 |
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